Abstract
References
- G. O. Arican and N. Akçam, “Design of a Low Cost X-Band LNA with Sub-1-dB NF for SATCOM Applications,” Gazi University Journal of Science, vol. 36, no. 1, pp. 208–218, Mar. 2023.
- H. Hausman, Microwave power amplifier design with MMIC modules. Artech House microwave library. Boston London: Artech House, 2018.
- G. O. Arican, N. Akcam, and E. Yazgan, “Ku‐band GaAs mHEMT MMIC and RF front‐end module for space applications,” Micro & Optical Tech Letters, vol. 63, no. 2, pp. 417–425, Feb. 2021.
- H. Jin, F. Yang, H. Tao, W. Xiao, Y. Zhou, and L. Cai, “A Ku -Band 100-W High-Power Amplifier MMIC Using 0.2-µm GaN Technology,” IEEE Microw. Wireless Tech. Lett., vol. 34, no. 1, pp. 80–83, Jan. 2024.
- J. Kamioka, Y. Tarui, Y. Kamo, and S. Shinjo, “54% PAE, 70-W X -Band GaN MMIC Power Amplifier With Individual Source via Structure,” IEEE Microw. Wireless Compon. Lett., vol. 30, no. 12, pp. 1149–1152, Dec. 2020.
- Y. S. Noh and I. B. Yom, “A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications,” IEEE Microw. Wireless Compon. Lett., vol. 26, no. 8, pp. 619–621, Aug. 2016.
- G. O. Arıcan and B. A. Yılmaz, “A 10-W GaN on SiC CPW MMIC High-Power Amplifier With 44.53% PAE for X-Band AESA Radar Applications,” ELECTRICA, vol. 24, no. 3, pp. 780–788, Nov. 2024.
- H.-Q. Tao, W. Hong, B. Zhang, and X.-M. Yu, “A Compact 60W X-Band GaN HEMT Power Amplifier MMIC,” IEEE Microw. Wireless Compon. Lett., vol. 27, no. 1, pp. 73–75, Jan. 2017.
- B. Zhao, “A 3-Stage, 51% PAE, High Linearity, 70W X-Band GaN MMIC Power Amplifier,” in 2024 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS), Waco, TX, USA: IEEE, Apr. 2024, pp. 1–5.
- M. van Heijningen et al., “Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs,” presented at the European Gallium Arsenide and Other Semiconductor Application Symposium, Paris, France: GAAS 2005, pp. 237–240.
- B. Cimbili, C. Friesicke, F. V. Raay, S. Wagner, M. Bao, and R. Quay, “2.6- and 4-W E -Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%,” IEEE Microw. Wireless Tech. Lett., vol. 33, no. 6, pp. 847–850, Jun. 2023.
- W. Deal, “Coplanar waveguide basics for MMIC and PCB design,” IEEE Microwave, vol. 9, no. 4, pp. 120–133, Aug. 2008.
- G. O. Arıcan, “Design and fabrication of compact Wilkinson power divider on gallium nitride coplanar technology”, NOHU J. Eng. Sci., vol. 12, no. 1, pp. 113–118, Nov. 2022.
- B. Dökmetaş and M. Karahan, “Miniaturized GaN-Based Wilkinson Power Divider for X-Band Communication Systems”, Osmaniye Korkut Ata University Journal of The Institute of Science and Techno, vol. 8, no. 1, pp. 432–444, Jan. 2025.
- J. Jeong et al., “X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling,” Electronics Letters, vol. 60, no. 10, p. e13221, May 2024.
- S.-H. Han and D.-W. Kim, “Robust Ku-Band GaN Low-Noise Amplifier MMIC,” J. Electromagn. Eng. Sci, vol. 24, no. 2, pp. 170–177, Mar. 2024.
Abstract
This paper presents the design and performance analysis of an X-band monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) using four parallel high-electron-mobility transistors (HEMTs) with dimensions of 8×125 μm2. Operating in the frequency range of 7.6–10.3 GHz, the proposed amplifier achieves a maximum small-signal gain of 11.7 dB with a gain flatness of 0.59 dB/GHz, ensuring consistent performance across the operating band. The coplanar waveguide (CPW) structure, implemented using Gallium Nitride (GaN) on a Silicon Carbide (SiC) process, eliminates the need for via-holes, reducing manufacturing complexity while improving impedance matching and compactness. Stability analyses confirm unconditional stability, with the K-factor and μ-factor exceeding 1 and Delta remaining below 1 across the entire operating frequency range. Power simulations demonstrate a saturated output power of 41.21 dBm and a peak power-added efficiency (PAE) of 39.81%, highlighting the amplifier's high efficiency and robust performance. The measurement results exhibit a remarkable consistency with the simulated data. These results demonstrate the suitability of the amplifier for demanding X-band applications including satellite communications, radar systems, and electronic warfare.
Keywords
X-band High-Electron-Mobility Transistors (HEMTs) Monolithic Microwave Integrated Circuit (MMIC) High-Power Amplifier (HPA) Gallium Nitride (GaN) on a Silicon Carbide (SiC) Coplanar Waveguide (CPW)
References
- G. O. Arican and N. Akçam, “Design of a Low Cost X-Band LNA with Sub-1-dB NF for SATCOM Applications,” Gazi University Journal of Science, vol. 36, no. 1, pp. 208–218, Mar. 2023.
- H. Hausman, Microwave power amplifier design with MMIC modules. Artech House microwave library. Boston London: Artech House, 2018.
- G. O. Arican, N. Akcam, and E. Yazgan, “Ku‐band GaAs mHEMT MMIC and RF front‐end module for space applications,” Micro & Optical Tech Letters, vol. 63, no. 2, pp. 417–425, Feb. 2021.
- H. Jin, F. Yang, H. Tao, W. Xiao, Y. Zhou, and L. Cai, “A Ku -Band 100-W High-Power Amplifier MMIC Using 0.2-µm GaN Technology,” IEEE Microw. Wireless Tech. Lett., vol. 34, no. 1, pp. 80–83, Jan. 2024.
- J. Kamioka, Y. Tarui, Y. Kamo, and S. Shinjo, “54% PAE, 70-W X -Band GaN MMIC Power Amplifier With Individual Source via Structure,” IEEE Microw. Wireless Compon. Lett., vol. 30, no. 12, pp. 1149–1152, Dec. 2020.
- Y. S. Noh and I. B. Yom, “A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications,” IEEE Microw. Wireless Compon. Lett., vol. 26, no. 8, pp. 619–621, Aug. 2016.
- G. O. Arıcan and B. A. Yılmaz, “A 10-W GaN on SiC CPW MMIC High-Power Amplifier With 44.53% PAE for X-Band AESA Radar Applications,” ELECTRICA, vol. 24, no. 3, pp. 780–788, Nov. 2024.
- H.-Q. Tao, W. Hong, B. Zhang, and X.-M. Yu, “A Compact 60W X-Band GaN HEMT Power Amplifier MMIC,” IEEE Microw. Wireless Compon. Lett., vol. 27, no. 1, pp. 73–75, Jan. 2017.
- B. Zhao, “A 3-Stage, 51% PAE, High Linearity, 70W X-Band GaN MMIC Power Amplifier,” in 2024 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS), Waco, TX, USA: IEEE, Apr. 2024, pp. 1–5.
- M. van Heijningen et al., “Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs,” presented at the European Gallium Arsenide and Other Semiconductor Application Symposium, Paris, France: GAAS 2005, pp. 237–240.
- B. Cimbili, C. Friesicke, F. V. Raay, S. Wagner, M. Bao, and R. Quay, “2.6- and 4-W E -Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%,” IEEE Microw. Wireless Tech. Lett., vol. 33, no. 6, pp. 847–850, Jun. 2023.
- W. Deal, “Coplanar waveguide basics for MMIC and PCB design,” IEEE Microwave, vol. 9, no. 4, pp. 120–133, Aug. 2008.
- G. O. Arıcan, “Design and fabrication of compact Wilkinson power divider on gallium nitride coplanar technology”, NOHU J. Eng. Sci., vol. 12, no. 1, pp. 113–118, Nov. 2022.
- B. Dökmetaş and M. Karahan, “Miniaturized GaN-Based Wilkinson Power Divider for X-Band Communication Systems”, Osmaniye Korkut Ata University Journal of The Institute of Science and Techno, vol. 8, no. 1, pp. 432–444, Jan. 2025.
- J. Jeong et al., “X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling,” Electronics Letters, vol. 60, no. 10, p. e13221, May 2024.
- S.-H. Han and D.-W. Kim, “Robust Ku-Band GaN Low-Noise Amplifier MMIC,” J. Electromagn. Eng. Sci, vol. 24, no. 2, pp. 170–177, Mar. 2024.
Details
| Primary Language | English |
|---|---|
| Subjects | Radio Frequency Engineering, Semiconductors, Wireless Communication Systems and Technologies (Incl. Microwave and Millimetrewave), Satellite Communications |
| Journal Section | Research Article |
| Authors | |
| Publication Date | June 1, 2025 |
| Submission Date | January 3, 2025 |
| Acceptance Date | May 14, 2025 |
| Published in Issue | Year 2025 Volume: 13 Issue: 2 |
